| 摘要 |
<p>A process is disclosed for forming an isolation region in a substrate of an integrated circuit structure while minimizing the creation of stress in the substrate which comprises forming a first mask over a portion of the substrate where an isolation region is to be formed, forming an isolation slot in the substrate through an opening in the mask, oxidizing the walls of said isolation slot, removing the first mask, growing an epitaxial layer over the substrate which fills or covers the remainder of the isolation slot, forming a second mask over the epitaxial layer with an oversize opening therein over the isolation slot beneath the epitaxial layer, and oxidizing the exposed portion of the epitaxial layer through the opening in the second mask to form an oxide cap over the isolation slot which extends downwardly through the epitaxial layer to the oxide in the isolation slot.</p> |
