发明名称 |
METHOD OF PRODUCING CROSS-COUPLINGS BETWEEN N AND P CHANNEL CMOS FIELD EFFECT TRANSISTORS OF READ-AND-WRITE MEMORIES, PARTICULARLY WITH 6-TRANSISTOR MEMORY DEVICES |
摘要 |
<p>Cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories (SRAMs) with buried contacts to the n+ and p+ regions in the substrate are obtained in accordance with known method steps and with a high packing density. A gate level thereof formed of a polycide double layer is used as an additional wiring level for the cross-coupling. The formation of the gate level occurs after the opening of regions for the buried contacts. A doping occurs simultaneously with the generation of source/drain regions of the n-channel and p-channel transistors by masked ion implantation and a subsequent high-temperature treatment. Accordingly, simple, mask-non-intensive method steps result which are especially useful in the manufacture of 6-transistor SRAMs.</p> |
申请公布号 |
EP0208267(B1) |
申请公布日期 |
1990.03.07 |
申请号 |
EP19860109083 |
申请日期 |
1986.07.03 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
NEPPL, FRANZ, DR.;HIEBER, KONRAD, DR.;SCHWABE, ULRICH, DR. |
分类号 |
H01L27/11;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8244;H01L21/8247;H01L27/088;H01L27/092;H01L27/10;H01L29/78 |
主分类号 |
H01L27/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|