发明名称 |
Suspended gate field effect semiconductor pressure transducer device |
摘要 |
A capacitive pressure transducer comprising: field effect solid state electronic device having a semiconductor gate area, an insulating layer and a gate element; the gate element being made of conducting material and being constructed to move in response to pressure differentials on the two sides thereof so as to function as a diaphragm; the gate element being hermetically sealed along its perimeter with the said insulating layer; the gate element also being a conductor so as to change the capacitance between the said gate element and the semiconductor of said field effect solid state device and cause any change in the output of said solid state electronic device to be a measure of the change of the pressure; and a method of making the suspended diaphragm and gate element.
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申请公布号 |
US4906586(A) |
申请公布日期 |
1990.03.06 |
申请号 |
US19880290447 |
申请日期 |
1988.12.27 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
BLACKBURN, GARY F. |
分类号 |
G01L9/00;H01L29/84 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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