| 摘要 |
A method of fabricating an inverse-T LDDFET with salicide on a substrate is disclosed. The initial steps include anisotropic silicon nitride and incomplete polysilicon etching steps followed by an n- ion-implantation process. Then oxide sidewall spacers are formed and the unmasked polysilicon is removed completely. The LDDFET structure is formed by the implantation of ions to form heavily-doped source and drain regions. Thereafter oxide sidewall spacers are removed and the thin polysilicon step is oxidized completely. After the silicon nitride and silicon dioxide layers are removed, the self-aligned silicide is applied to form the inverse-T LDDFET with salicide.
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