Intra-gate offset high voltage thin film transistor with misalignment immunity,申请号US19880245872-传众专利搜索

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发明名称	Intra-gate offset high voltage thin film transistor with misalignment immunity
摘要
申请公布号	US4907041(A)	申请公布日期	1990.03.06
申请号	US19880245872	申请日期	1988.09.16
申请人	XEROX CORPORATION	发明人	HUANG, TIAO-YUAN
分类号	H01L21/28;H01L21/336;H01L29/78;H01L29/786	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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