| 摘要 |
In a photoelectric conversion device manufacturing method which includes at least a step of forming a non-single-crystal semiconductor layer, a transparent or nontransparent layer, or a laminate member composed of transparent and nontransparent layers by patterning with a laser beam, a laser beam which has a short wavelength of 600 nm or less, a spot diameter of 3 to 60 nm and a width of 50 nano-second is used for the patterning.
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