| 摘要 |
PURPOSE:To reduce turnaround time of a storage device consisting of an array of series-connected MISFETs by removing part of a semiconductor film to which an impurity is to be introduced and forming a bit line extending in parallel with this film thereby to allow information to be written after the formation of the bit line. CONSTITUTION:MISFFTs Q1 to Q8 and T1 to T4 of a ROM arranging their source and drain regions between lead lines WL1 to WL4 and selection lines SL1 and SL2 and adjacent and in a direction orthogonal thereto, have their semiconductor areas connected in series through a polysilicon layer on a silicon substrate. The area in which part of the layer 7 is removed is provided with bit line 9 in parallel with the layer 7 through an insulating film. To prevent the layer 7 overlapping the line 9, a clearance between them is used to introduce an impurity into the layer 7. Information can be written after the bit line has been formed, thereby allowing the turnaround time to be reduced. |
