| 摘要 |
PURPOSE:To enable the micronization of a memory cell so as to obtain a dynamic memory provided with a large number of bits in a extremely small area by a method wherein a memory cell charge transfer transistor channel region is formed on a pair of side faces of an island of a semiconductor layer and a bit wire contact is formed on the upside of the island of the semiconductor layer. CONSTITUTION:An n<+>-layer 9 is formed on the upsides of islands 6, the upsides and the side faces of the islands 6 are covered with an insulating film 8 so as to isolate the islands from each other, a contact hole is provided to the insulating film 8, a bit wire material 12 is deposited on the whole face, which is etched so as to leave the bit wire 12 unremoved to be arranged in a direction which crosses a gate electrode 11 at a right angle. By this setup, the bit wire 12 is in contact with the n<+>-layer 9 formed on the upside of the island 6 through the intermediary of the contact hole provided in the insulating film 8. The bit wire 12 can be formed of metal wiring, so that it is small in wiring resistance and line capacity Cb. And, the protrudent island 6 is formed astride two trenches 3, and a charge transfer transistor channel region is formed on a pair of side faces of the island 6, so that memory cells can be micronized and a dynamic memory having a large number of bits in a small area can be formed. |
