FREMGANGSMAADE OG APPARAT TIL UDFOERELSE AF EN EPITAKSIEL VAEKST AF ATOMARE LAG

摘要

A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.