发明名称 LEVEL CONVERTION CIRCUIT FROM MOS TO ECL
摘要 PURPOSE: To prevent malfunction of the circuit by providing 1st and 2nd transistor(TR) connecting to a current source and configuring a differential pair and forming the 1st TR to be a diode-connected TR so as to allow the 1st TR to supply its own reference voltage. CONSTITUTION: For example, a TR 20 is conductive with a low level input at a node IN and a TR 22 is nonconductive. Thus, a TR 24 is conductive, emitters of the TRs 24, 26 have a level to reverse-bias an emitter-base voltage of the TR 26, then the TRs 26, 30 are nonconductive, resulting that a logically high level voltage Vcc appears at a node OUT. A current equal to a current I trough a constant current source 28 flows to a resistor 34. The voltage at the node OUT is nearly equal to Vcc-(I×R34). Thus, the voltage at the node OUT corresponds to a logic low level and the base-collector junction is always reverse-biased during the operation of the circuit, then malfunction is prevented.
申请公布号 JPH0263318(A) 申请公布日期 1990.03.02
申请号 JP19890134486 申请日期 1989.05.26
申请人 TEXAS INSTR INC <TI> 发明人 HIIPU BUI TORAN
分类号 H03K19/0175 主分类号 H03K19/0175
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