| 摘要 |
PURPOSE:To form an opening hole smaller than a 1st resist film and to form a minute resist pattern efficiently by laminating and adhering the 1st resist film and a 2nd resist film different in composition on the flank of the opening hole of the 1st resist film, and removing the nonreacting layer of the 2nd resist film. CONSTITUTION:The 1st resist film 11 is formed on a semiconductor substrate 101 and irradiated with an electron beam 13 as shown by an arrow according to a specific pattern. Then the 1st resist film 11 is developed by a liquid developer to form the opening hole 11a. Then a resist film 12 is formed by coating and a heat treatment is carried out to form a reacting layer 14 of both resist films which is not peeled by the peeling processing of the 2nd resist film 12 at the border between the 1st resist film 11 and 2nd resist film 12. Then, ultraviolet rays are projected so as to peel the 2nd resist film 12 which does not react and then the substrate is dipped in the liquid developer to form the resist pattern. Consequently, the opening hole of the 1st resist film can be set wider than finally needed opening hole size and the fine pattern is easily formed with good reproducibility. |
