发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To increase similarity of a pattern shape to rectangular shape and to improve resolution thereof by using plural positive photoresists having different dissolution velocity in an alkaline developing soln. to each other for a same exposure and forming the resists on a substrate the nearer it is to the substrate the larger its dissolution velocity is. CONSTITUTION:Positive photoresists 1, 2, 3 contain respective esterified product of naphthoquinone diazide and hydroxybenzophenone having each different dissolution velocity in an alkali developing soln. for same exposure. The higher the dissolution velocity of the resist 1 is, the nearer the resist 1 is formed to the substrate side 7. Thus, the difference between the dissolution velocity of the resist at the surface side 3 and the substrate side 7 of the resist becomes smaller, so the pattern shape after development can be more similar to a rectangular shape and the resolution can be improved. Further, since the resist layer has high sensitivity as a whole, less light quantity is required for the exposure. By this constitution, the shape of fine pattern is made more similar to a rectangular shape, and a desired resist pattern is obtd. easily and stably.
申请公布号 JPH0263056(A) 申请公布日期 1990.03.02
申请号 JP19890086029 申请日期 1989.04.04
申请人 MITSUBISHI KASEI CORP;MITSUBISHI ELECTRIC CORP 发明人 OCHIAI TAMEICHI;KAMEYAMA YASUHIRO;KISHIMURA SHINJI;UOTANI SHIGEO
分类号 G03F7/095;H01L21/027 主分类号 G03F7/095
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