| 摘要 |
This method consists a in preparing the surface of the substrate 4 to be placed in contact with the oxide layer 10 with a view to eliminating therefrom any trace of natural oxide which may be present, b in oxidising the prepared surface by ultraviolet irradiation in an oxygen atmosphere. It makes it possible to obtain an oxide layer 8 from 3 to 5 nm thick forming part of the construction of a Schottky diode 4, 10 formed on a semi-insulating InP substrate 2. <IMAGE>
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