| 摘要 |
PURPOSE:To absorb fluctuation in the capacitance value of a storage cell capacitor and dispersion in the dielectric strength of a capacitor insulation film by enabling a voltage to be applied on the counter electrode of the capacitor to be selected after manufacturing a memory circuit. CONSTITUTION:Output from plural counter electrode potential generation circuits 9 are connected to the counter electrode of the capacitor 9 in a memory cell 4 via fuses 10. After the memory circuit is manufactured, the optimum potential out of the plural counter electrode output is decided after confirming an element characteristic, and the remaining fuses except for the fuse 10 connected to a circuit to generate the optimum potential are fused. In such a way, it is possible to absorb the fluctuation in the capacitance value of the storage cell capacitor due to the dispersion in manufacturing and the dispersion in the dielectric strength of the capacitor insulation film. |
