| 摘要 |
<p>PURPOSE:To obtain a thin film transistor(TFT) for liquid crystal driving having little optical current by making so that ultraviolet light using a gate insulating film in the rear exposure may penetrate with no damping while light having the other wavelength may be damped. CONSTITUTION:After three-layer SiN film 3-1a, 3-1b, 3-1c and two layer Ta2O3 film 3-2a, 3-2b are alternately laminated on a glass substrate 1 with a gate electrode G, a resist is applied and this resist film 5 is irradiated with ultraviolet light 9 from the rear of the glass substrate 1 for performing rear exposure having the gate electrode G as a mask. Due to such constitution of a gate insulating film 3, ultraviolet light 9 of lambda=435nm resonates and through this light the resist except at the upper part of the gate electrode is effectively exposed in a short time, forming a resist film 6 on the upper layer part of the gate electrode G. Next, an Al film is formed by vapor deposition so that a self-matched TFT is finished after performing lift-off.</p> |
