| 摘要 |
PURPOSE:To obtain a p:n type amorphous silicon germanium solar cell suppressing optical deterioration as initial deterioration to about 2% by making the ratio of germanium atoms to silicon atoms specific composition. CONSTITUTION:A subject solar cell is composed by sequentially laminating a p-type a-SiC:H film 3 as a p-layer, an a-SiGe:H film 4 as an i-layer, an n-type fine crystal Si film 5 as an n-layer and the rear Al electrode 6 on a substrate forming an SnO2 film 2 on a glass substrate 1. A blue plate glass is used for the glass substrate 1, whereon about 2000Angstrom of the SnO2 film is formed. A p-type Si-type a-SiGe:H film 3 consists of an a-SiC:H film into which B atoms are doped. An n-SiGe:H film 4 can change the ratio of Si atoms and Ge atoms in the film by changing the flow ratio of SiH4 and GeH4. The desirable ratio shall be in the range of about 0.8 to 1.2. |
