发明名称 MANUFACTURE OF METAL THIN FILM RESISTOR
摘要 <p>PURPOSE:To obtain a metal thin film resistor whose cost is low and whose productivity is excellent by a method wherein a compound layer containing a metal is formed on a substrate and a metal oxide obtained by pyrolysis is heat-treated in a reducing atmosphere. CONSTITUTION:A compound layer containing a metal is formed on a substrate; the compound layer containing the metal is pyrolyzed in an oxidizing atmosphere; a metal oxide is formed. After that, it is heat-treated in a reducing atmosphere. As a compound containing the metal, various alkoxides, various carboxylic acid salts, various organic compound complexes, various organic compounds such as metallocene or the like, or various inorganic compounds such as a nitrate, a sulfate or the like can be enumerated. Thereby, it is possible to easily obtain a metal thin film resistor by using a printing apparatus and a simple apparatus of an atmospheric furnace.</p>
申请公布号 JPH0262006(A) 申请公布日期 1990.03.01
申请号 JP19880213901 申请日期 1988.08.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TABATA MUNEHIRO;HASEGAWA HIROSHI;ISOZAKI YASUTO;HAYASHI CHIHARU;OKANO KAZUYUKI
分类号 H01C17/06;H01B13/00 主分类号 H01C17/06
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