The invention relates to a method for producing small openings in thin films, especially for producing contact windows on a mesa structure of a semiconductor component. In this case, only the mesa structure is coated very thinly with a polymerisable layer which can then be selectively removed, for example by an O2 plasma. A (contact) window results, in which a further wet-chemical or plasma etching can be carried out.
申请公布号
DE3828379(A1)
申请公布日期
1990.03.01
申请号
DE19883828379
申请日期
1988.08.20
申请人
LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE
发明人
JUNG, HELMUT, DR., 7900 ULM, DE;MARSCHALL, PETER, 7910 NEU-ULM, DE