| 摘要 |
PURPOSE:To obtain an Si wafer of high flatness by a method wherein, in a method to polish the Si wafer, a polisher with a specific viscoelasticity value is used. CONSTITUTION:A polisher 2 whose viscoelasticity value is 20mum or lower is used as compared with a conventional polisher with a high viscoelasticity value. Although its value is 10mum in the center of a surface plate 1, its value is 20mum at an outer periphery of the surface plate 1; a deviation in the viscoelasticity value is 10mum or lower and is sharply smaller than that of 40mum by a conventional polisher. Then, the polisher 2 and an Si wafer 5 are closely contacted uniformly; a face pressure 13 becomes uniform; a whole face can be polished uniformly. Thereby, it is possible to obtain the wafer 5 of high flatness. |
