| 摘要 |
<p>PURPOSE:To obtain a semiconductor device for IC card with a high IC mechanical strength and operational reliability by a method wherein an IC chip is die- bonded on a substrate with a die bonding material having a Young's modulus less than a specific value, a conductor pattern on the substrate is wire-bonded to the IC chip, and the IC chip is sealed with a sealing material having a Young' s modulus less than a specific value. CONSTITUTION:As a die-bonding material 11A for die-bonding an IC chip 10 on a die pad 7, a resin having a Young's modulus of 50-kgf/mm<2> or less, such as a thermoset silicone resin, is used. By thermally setting the die-bonding material 11A, the IC chip 10 is bonded on a substrate 5 through the die pad 7. After an Au wire 12 is wire-bonded, a sealing material 13A, such as a photo- setting acrylic resin having a young's modulus of 200kgf/mm<2> or less is loaded by potting. In this manner, an IC module 3A is completed.</p> |
