| 摘要 |
PURPOSE:To contrive that an Al pad for connection is not disconnected by corrosion in a high temperature and a high moisture, by providing a superposition film electrode constituted of fusion resisting metal and Al or Al alloy on a bonding pad, regarding the pad electrode of a semicondutor device. CONSTITUTION:On the Al wiring 3, an electrode constituted of a Ti film 14 and an Al film 15 is formed, and the film thickness of the Ti film 14 is set 0.1- 0.5mum and that of the A film approx. 0.4-2mum. When the semiconductor device is used in a high temperature and high moisture, even on reaching of contaminated water down to the second layer Al film 15 surface resulting in the corrosion of the Al film 15, the corrosion stops at the part of the Ti film 14. Besides, the corrosion is difficult to advance downward a fine wire 5, and therefore disconnections between the Al wiring 3 and the Au fine wire 5 can be prevented. |
