发明名称 |
Process for making self-aligned contacts. |
摘要 |
<p>A process for making metal contacts and interconnection lines which are self-aligned to each other is disclosed. After semiconductor devices are formed and an insulating/planarizing layer is deposited, a layer of polyimide is deposited. A pattern of trenches into which the metal interconnection lines will be deposited is formed in the polyimide layer. Next, a pattern of contacts to the underlying semiconductor devices is formed in a photoresist layer. This pattern of contacts is subsequently etched into the insulating/planarizing layer. Since both the patterned photoresist layer and the patterned polyimide layer are used as etch masks, thc contact windows through the insulating/planarizing layer and the trenches in the polyimide layer will be aligned with respect to each other. After metal deposition, the metal contacts and interconnection lines will be self-aligned.</p> |
申请公布号 |
EP0355339(A2) |
申请公布日期 |
1990.02.28 |
申请号 |
EP19890112163 |
申请日期 |
1989.07.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
STANASOLOVICH, DAVID;PETERMAN, STEVEN |
分类号 |
H01L21/60;H01L21/768 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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