发明名称 TEMPERATURE DETECTION CIRCUIT
摘要 PURPOSE:To obtain a specified temperature detection signal by impressing a voltage between the collector and the emitter of a transistor and detecting the leaked current in a thermal shutdown circuit which detects the abnormal rising of a temperature in an IC chip and stops the function of a circuit in the IC. CONSTITUTION:The thermal shutdown(heat shutdown circuit) circuit 1 is provided with PNP transistors Q1, Q2, Q3,... for detecting temperatures which are connected in parallel and the respective bases of the PNP transistors for detecting the temperatures are made in an open state. An NPN transistor Q10 is a transistor obtained by connecting the NPN transistor Q11 with a current mirror. It detects the leaked current between the collector and emitter of the PNP transistors Q1, Q2, Q3,... and drives the NPN transistor Q11, the generates a shutdown signal(temperature detection signal) on the collector side of the transistor Q11. When an output signal from an output terminal 1a is in a specified temperature state, it is outputted to a function circuit 2 which is the object of thermal shutdown.
申请公布号 JPH0259630(A) 申请公布日期 1990.02.28
申请号 JP19880211515 申请日期 1988.08.25
申请人 ROHM CO LTD 发明人 OTANI KENJI;ITO FUMIHIKO
分类号 G01K7/01;G01K7/00;H01L23/58;H02H5/04;H03K17/94 主分类号 G01K7/01
代理机构 代理人
主权项
地址