| 摘要 |
PURPOSE:To improve a solar cell in sensitivity to shortwaves in order to obtain the solar cell of high efficiency by a method wherein the impurity surface concentration of a first conductivity type diffusion layer provided to a photodetecting side is made to decrease in impurity surface concentration by doping with the impurity which gives a second conductivity type through an excimer laser. CONSTITUTION:POCl3 is thermally diffused into the surface of a p-type silicon substrate 2 to form an n-type diffusion layer 3. Next, the doping of the substrate 2 is executed through excimer laser rays in an impurity gas atmosphere such as B2H6 or the like which gives a p-type opposite to that of the layer 3 to form a p layer 4. The laser rays are shortwave having high energy density, so that heating hardly occurs inside the bulk and therefore only the surface of the layer 3 is made to decrease in impurity concentration by doping an impurity, of opposite conductivity, without making the layer 3 change in depth. Therefore, a solar cell is improved in sensitivity to shortwave rays through decreasing a surface recombining rate of a few carriers, so that the solar cell of high efficiency can be realized. |
