发明名称 |
Thin-film capacitor and method of manufacturing a hybrid microwave integrated circuit. |
摘要 |
<p>A thin-film capacitor which has excellent withstand voltage characteristic, dielectric loss characteristic and production yield can be obtained by forming its dielectric film with a 3-layered structure comprising a first silicon oxide film formed on a polycrystalline sintered body substrate by a chemical vapor-phase deposition method, a second silicon oxide film formed by coating on the first silicon oxide film a solution state silicon oxide precursor followed by denaturing by heat treatment, and a third silicon oxide film formed on the second silicon oxide film by a chemical vapor-phase deposition method. A hybrid microwave integrated circuit is manufactured in which the above-mentioned thin-film capacitors are used as input/output coupling and DC blocking capacitors, bypass capacitors and impedance matching capacitors.</p> |
申请公布号 |
EP0356212(A2) |
申请公布日期 |
1990.02.28 |
申请号 |
EP19890308527 |
申请日期 |
1989.08.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
EDA, KAZUO;MIWA, TETSUJI;TAGUCHI, YUTAKA |
分类号 |
H01G4/10;H01L27/01 |
主分类号 |
H01G4/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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