Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstaeben, insbesondere aus Silizium

摘要

A rod of silicon, produced by the deposition of silicon from a gaseous or vaporous silicon compound on to an electrically resistance heated carrier rod of silicon having terminal pieces of carbon or graphite, is subjected to the passage of a molten zone produced by induction heating while still attached to at least part of one terminal piece, said part being heated first thereby effecting preheating of the adjacent end of the rod by conduction before formation of the molten zone by induction heating. The molten zone may be initially formed in the adjacent end of the rod or at the opposite end adjacent a seed crystal after passage of a hot non-molten zone through the rod. Specification 861,135 is referred to.