| 摘要 |
PURPOSE:To obtain a sensor which can discriminate multicolor image by allowing an N<+> type amorphous Si layer to grow on an intrinsic amorphous Si substrate having a Pt layer at the rear side, forming thereon an intrinsic amorphous si layer having a Pt layer at the surface and by applying light beam to the one of two junctions and obtaining an output from the other junction. CONSTITUTION:A Pt layer 5 having a high working function can be deposited at the rear side of non-additive intrinsic amorphous Si substrate 4 and an N<+> type amorphous Si layer 3 is deposited on the surface. Next, an intrinsic amorphous Si layer 2 is grown thereon while eliminating the mounting surface of an electrode 6 and the Pt layer 1 is also deposited on the surface thereof. Thereafter, the electrodes 6 are respectively attached to the exposed area of layer 3 and the edges of layers 1 and 5. Then, the layers 1 and 2 form the one photo- sensor PS1, while the layers 6 and 4 form the other photo-sensor PS2. Thereby, junctions are realized through the stracking structure and a closely-attachable color image sensor with a large diameter can be obtained. |
