| 摘要 |
PURPOSE:To improve the yield of a semiconductor memory device by a method wherein, after a passivation film is formed, the resistance value of a high resistance semiconductor layer is measured, and according to the results, impurity is ion-implanted in the high resistance semiconductor layer, via the passivation film, thereby controlling the resistance value of the high resistance semiconductor layer. CONSTITUTION:The memory cell of a semiconductor memory device is constituted of a flip flop circuit and a pair of switching transistors T3, T4. The flip flop circuit is constituted of a pair of driver transistors T1, T2, and high resistance semiconductor layers R1, R2. In the case where this semiconductor memory device is manufactured, the resistance values of the high resistance semiconductor layers R1, R2 are controlled by the following manner: after a passivation film 16 is formed, the resistance values of the high resistance semiconductor layers R1, R2 are measured; according to the results, impurity is ion-implanted in the high resistance semiconductor layers R1, R2, via the passivation film 16. For example, the above ion implantation is performed with energy penetrating the passivation film 16 and an interlayer insulating film 15, after a resist pattern 17 is formed, in which apertures are formed at portions corresponding with the high resistance polycrystalline Si resistors R1, R2. |
