Semiconductor memory device capable of selective operation of memory cell blocks

摘要

A semiconductor memory device having a memory cell array constituted by a plurality of memory cell blocks includes a clock generator unit constituted by a plurality of clock generator sections, each of the clock generator sections corresponding to each of the memory cell blocks, and a block selector unit for selecting one of the clock generator sections in correspondence with the row address of a designated address. Accordingly, only a clock generator section corresponding to the selected memory cell block is operated by the designated address.