| 摘要 |
A device is disclosed for etching silicon wafers, with a support (1) for the silicon wafers, an annular nozzle (8) being provided in the surface (9, 10) of this support that faces the silicon wafer (11), the nozzle being chargeable with compressed gas for the formation of a gas cushion between the support (1) and the silicon wafer (11), the gas exiting between the wafer (11) and the support (1) preventing passage of treatment fluid onto the underside of the wafer (11). The support (1) is located within the interior (21) of an annular tank (20) wherein at least two annular ducts (25, 26, 27) are provided which are open toward the interior (21) of this tank. Furthermore, means are included for lifting and for lowering the support (1) with respect to the tank (20) and for setting the support (1) into rotation about its axis (14) which latter is congruent with the central axis of the tank (20).
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