| 摘要 |
This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circuit. It utilizes a pattern superconductor film; applying an aluminum film on the patterned superconductor film; and then applying a molybdenum film on the aluminum film to provide an aluminum-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film; etching the exposed molybdenum film to expose a portion of the aluminum-molybdenum, etch-stop interface; and oxidizing the exposed aluminum-molybdenum, etch-stop interface. The aluminum-molybdenum etch stop interface protects the patterned superconductor film and the support (including any other underlayers) and increases processing margins for the etch time. Preferably the etching of the exposed molybdenum film is by reactive ion etching and the oxidizing the exposed aluminum-molybdenum etch stop interface is by exposing the interface to a plasma containing about 25-75 volume percent oxygen and 25-75 volume percent argon) and the aluminum film is about 30-40 Angstroms thick).
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