发明名称 Vertical spray etch reactor and method
摘要 Vertical spray etch reactor and method in which a nitric acid etching solution is sprayed onto an upright workpiece in the form of low impact, large drops to produce a gentle sheeting flow of the etching solution down the workpiece. The solution is sprayed in a generally trapezoidal pattern with the greater portion of solution being sprayed onto the upper portion of the workpiece. The etching solution is delivered to the spray nozzles by a low shear positive displacement pump. As the workpiece leaves the etch chamber, it is sprayed with a solution to remove the etching solution and dissolved copper and to adsorb gaseous by-products from the etching reaction. The rinsing solution is collected and utilized to replenish the etching solution. The workpiece receives additional rinsing in a third chamber, and gases are exhausted from the system through an exhaust vent in the third chamber. Air is introduced into the etch chamber to move the gaseous by-products toward the exhaust vent.
申请公布号 US4904339(A) 申请公布日期 1990.02.27
申请号 US19890358551 申请日期 1989.05.26
申请人 PSI STAR 发明人 DIEHL, PAULO A.;BJORGE, WILLIAM R.;NELSON, NORVELL J.
分类号 C23F1/08;H05K3/06 主分类号 C23F1/08
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