| 摘要 |
<p>PURPOSE:To suppress the generation of a high resistance oxide layer on one side surface of an element and to facilitate a mass production by molding and reducing a reduction reoxidation type semiconductor porcelain material as a main component, and burying the one side surface of the element in substance having slower diffusion of oxygen than that of the main component to reoxidize it. CONSTITUTION:Specific amounts of SrTiO3, Nb2O5, CuO are molded in a disc state. Then, after it is fired in the air, it is baked in a reducing atmosphere. Subsequently, MgO powder is laid in a magnetic sheath, reduced and fired discs are so aligned thereon with one side faces disposed down that the faces are completely buried in the powder, and heat treated in the air to be reoxidized. Then, the opposed faces of the discs are coated with electrode pastes such as Ag, and mins-fired in the air to form electrodes. The diffusion of oxygen is delayed from the main component so that the oxygen is scarcely diffused to the surface of a semiconductor porcelain in contact with the MgO in the MgO and a high resistance layer is hardly formed. Accordingly, electrostatic capacity is remarkably increased as compared with the case that high resistance oxide layers are provided on both side surfaces of the element.</p> |
