| 摘要 |
<p>PURPOSE:To narrow between ohmic electrodes and to shorten the length of a gate by removing a mesa structure by etching a substrate layer from the face from which an insulating film is removed, forming a recess structure between ohmic metal films, and forming a gate electrode metal film by utilizing lift-off by the insulating film on the structure. CONSTITUTION:An insulating film 5 is formed on a surface by a plasma CVD or the like, coated with resist 6 in thickness for flattening the surface, removed to a thickness for presenting the film 5 on the surface on a reverse mesa structure 3 by ashing or the like, and the film 5 presented on the surface is removed by etching. Then, the structure 3 is removed by etching a substrate layer 1, and a recess structure 7 is formed between ohmic electrode metal films 4. Thereafter, a metal film 8 is deposited on the surface, lifted OFF by the film 5 on a recess structure 7, the film 5 is partly removed by etching, the resist 6 is dissolved, the film 8 on the resist 6 is removed, and the remaining film 5 is further removed by etching. Accordingly, a gate electrode 8 in which the length of a gate with the structure 7 is narrower than the width of a resist pattern is obtained.</p> |
