| 摘要 |
PURPOSE:To obtain a semiconductor device, by which an inductance is lessened, the prevention of a high-frequency leak can be realized and high-frequency characteristics can be improved, by a method wherein an internal connection is performed using a resin film which has a conductive shielding plate adhered on its surface on one side and has inner leads bonded on its surface on the other side. CONSTITUTION:A semiconductor device comprises a semiconductor element 4 mounted on a container 6, inner leads 2 bonded on electrode pads 5 of the element 4, a resin film 1 provided on said element 4 holding the leads 2 between the element 4 and the film 1 and a conductive shielding plate 3 adhered on its surface to oppose to the surface which is bonded to the leads 2. For example, after copper foils are adhered on both surfaces of a resin film 1, which consists of a material identical with that of a film carrier and is 50mum or thereabouts in thickness, the copper foil on one side is arbitrarily formed by patterning, an Au plating is applied to form inner leads 2 and the copper foil on the other side is left intact to use as a conductive shielding plate 3. |
