| 摘要 |
PURPOSE:To change the temperature dependency of resistance value, improve the controllability of resistance value, stabilize the resistance value, and enable increasing the resistance value by ion-implanting C or CO in Si, or enable decreasing it as occasion requires. CONSTITUTION:In an Si resistor, C or CO is ion-implanted. For example, one amorphous Si thin film is formed by ion-implanting P<+> only whose dosage is 2X10<15>cm<-2>, in a polycrystalline Si thin film formed by low pressure CVD method. The other amorphous Si thin film is formed by ion-implanting CO<+> whose dosage is 5X10<14>cm<-2>, in addition to P<+>. When the two thin films are subjected to heat treatment at 600 deg.C, the degree of crystallization of each film is as shown by figure, from which it can be recognized that crystallization is restrained by ion implantation of CO<+>. When the dosage of CO<+> is larger than or equal to 5X10<15>cm<-2>, crystallization is not caused even in the case of heat treatment for 140hr. As a result, when amorphous state can be maintained by the above effect in the case of heat treatment, the temperature dependency of resistance value can be reduced. |
