Large scale integrable memory cell with a trench capacitor wherein the trench edge is surrounded by a field oxide region

摘要

A large scale integrable memory cell including a field effect transistor lying at a bit line and further including a storage capacitor which is formed by the wall of a trench and a cooperating electrode. The active region of the storage cell which lies outside the trench is fashioned in the form of a strip. The end face forms one part of the trench edge and the remaining portion of the trench edge is surrounded by a field oxide region.