| 摘要 |
PURPOSE:To ensure large capacitor capacitance without thinning a capacitor insulating film by making the thickness of an electrode arranged to a lower section larger than the radius of a connecting hole electrically connecting the electrode and a conductive film or a diffusion layer in the lower layer of the electrode. CONSTITUTION:A MOS transistor, a data line 8, an inter-layer insulating film 9, and a storage-electrode connecting hole 15 are formed onto a P-type silicon substrate 1. An silicon film is shaped, and the silicon film is worked through plasma etching and used as a storage electrode 10, and a capacitor insulating film 11 and a plate electrode 12 are formed and employed as a capacitor. The thickness of the electrode 10 disposed to a lower section in the two electrodes is made larger than the radius of the connecting hole 15 electrically bonding the electrode 10 and the conductive film or diffusion layer 2, 5 of the lower layer of the electrode 10 at that time. |
