| 摘要 |
PURPOSE:To shorten workhours required for alignment by forming an impurity diffusion region for an anode region to a whole area on another side of a semiconductor substrate with depth shallower than the depth, to which a reverse conductivity type region reaches, and shaping an impurity diffusion region for the reverse conductivity type region in the impurity diffusion region. CONSTITUTION:A P<+> impurity diffusion region 5 for an anode region is formed onto the rear of a semiconductor substrate 1. The P<+> impurity diffusion region 5 is shaped in depth shallower than the depth to which a subsequently formed anode short-circuit regions reach. Windows 2b... for shaping cathode regions are bored to an oxide film 2 and windows 6a for forming the anode short-circuit regions to an oxide film 6, and N<+> impurity diffusion regions for the cathode regions 7 and the anode short-circuit regions 8 are shaped into the windows 2b, 6a. Accordingly, the alignment at a time when the impurity diffusion region for the anode region is formed is unnecessitated, thus improving workability, then shortening the production time. |
