DEPOSITION METHOD OF POLY-SILICON

摘要

The forming method of a poly-silicon for decreasing the contact resistance between the silicide layer and the second polysilicon layer has the following steps: (a) evacuating the reaction tube at the first temperature to prevent the thermal oxidation; (b) injecting the nitrogen gas in the reaction tube and increasing the temperature from the first temperature to the second temperature for forming a poly-silicon; (c) forming the poly-silicon at the second temperture; (d) eliminating the gas from the reaction tube and decreasing the temperature from the second temp. to the first temp.; (e) exposing the semiconductor substrate in the reaction tube at the first temp.