| 摘要 |
PURPOSE:To stabilize write characteristics by forming a first insulating film and a second insulating film brought into contact with a base region into an opening section selectively shaped to the first insulating film on the base region and thinning the film thickness of the second insulating film at a position in contact with the first insulating film. CONSTITUTION:The film thickness of a second insulating film (an silicon oxide film) 6 at a location in contact with a first insulating film (an silicon oxide film) 4 in an opening section is formed so as to be made thinner than the film thickness of the second insulating film at the location and in regions except sections near the location. Consequently, the second insulating film 6 shaped into the opening section selectively formed to the first insulating film 4 is shaped so that the position in contact with the first insulating film 4 and the sections near the position are only thinned, thus lowering applied voltage at the time of information writing. Accordingly, write characteristics can be stabilized. |
