| 摘要 |
PURPOSE:To increase the mobility of carriers by successively laminating a source electrode layer, a CdSe semiconductor layer and a drain electrode layer in parallel with an insulating substrate so that the electrode of two layers holding the CdSe semiconductor layer are not brought into contact electrically and forming a gate electrode in a region in which the electrodes of the two layers are not brought into contact electrically. CONSTITUTION:An NiCr layer is shaped onto a glass substrate 1, and used as a source electrode 2. A CdSe film 3 is formed onto the source electrode 2 as a semiconductor layer, and an NiCr layer is shaped onto the film 3 as a drain electrode 4. The NiCr layer 2, the CdSe film 3 and the NiCr layer 4 are reverse-sputtering etched at a time, and patterned so that one end faces of the three layers coincide with each other, and an Al-Ta-O layer as a gate insulating film 5 is formed to a shape coating the end faces. A gate electrode 6 is shaped in a region, in which the gate electrode 6 is not brought into contact electrically with the source electrode 2, the CdSe semiconductor layer 3 and the drain electrode 4 including the end faces of the three layers under the gate insulating film 5 on the gate insulating film 5 on the film 5. Accordingly, the effect of scattering on the crystal boundary of carriers is reduced, thus increasing the effective mobility of carriers. |
