| 摘要 |
PURPOSE:To change capacity between resistor terminals between an FET drain and a laser diode by connecting an FET in parallel to a resistance between an FET drain electrode and a laser diode and controlling gate voltage. CONSTITUTION:When a pulse signal enters a gate electrode G of a FET1, drive pulse signal corresponding to an input pulse signal is obtained. When the current is implanted into a semiconductor laser diode 5, the diode 5 oscillates. A drive pulse current waveform is speeded up and overshoot is provided to the first-bit pulse by capacity between the drain and source of an FET7 connected in parallel to a resistor 4 or capacity between the gate and source and between the gate and drain and the resistor 4. By controlling gate voltage of the FET7, capacity between the resistor terminals between the drain of the FET7 and a laser diode 5 can be changed continuously. |
