| 摘要 |
A manufacturing method of a gold wire for semiconductors comprises refining a high purity gold by local smelting, alloying 1-90 ppm IIA, IVB transition elements as dopants to meet the required mechanical and physical properties with the high purity gold, drawing the alloyed gold to 10-50 micro m gold wire, and heat treating the gold wire. The dopants can be 2-10 ppm Be, 2-50 ppm Ge and 2-50 ppm Ca. |
