发明名称 W-METALLIZED STRUCTURE IN ALN SUBSTRATE
摘要 PURPOSE:To obtain the title structure improved in bond strength and causing no bond strength drop-off even provided with heating such as waxing after bonding by forming at least two mixed metallized layers between an AlN substrate and a metallized layer made of W alone. CONSTITUTION:On an AlN substrate 1, two mixed metallized layers 2, 3 each made up of W and the identical ceramic with that constituting said substrate are formed, and a W-metallized layer 4 is formed thereon. The metallized layer 2 is higher in the ceramic content than the metallized layer 3. In case pins 8 are set up under the substrate 1, mixed metallized layers 2, 3 and a W- metallized layer 4 are formed as the above-mentioned case, and the lower surface of the W-metallized layer 4 is provided with a Ni-plated layer 10 followed by waxing the pins 8 with a wax material 7. According to the above process, the difference in component between both of the layers at each interface can be decreased to effect greater bond strength along with retaining the bond strength even provided with heating such as waxing.
申请公布号 JPH0255281(A) 申请公布日期 1990.02.23
申请号 JP19880204954 申请日期 1988.08.18
申请人 MURATA MFG CO LTD 发明人 KATOU TAKEYUKI;YONEDA YASUNOBU;SAKABE YUKIO
分类号 C04B41/90;H01L23/12;H01L23/498;H05K1/03;H05K3/38 主分类号 C04B41/90
代理机构 代理人
主权项
地址