| 摘要 |
PURPOSE:To form a image sensor with an low cost and excellent characteristic which is useful to a facsimile, etc., by simultaneously forming a leak current preventing diode to an image sensor constituted of a photo diode or a solar battery wherein the sensor part converting a visible light signal into an electric signal is formed of amorphous material. CONSTITUTION:A discrete electrode part 24, a discrete signal electrode 30 and the amorphous Si layer placed between the both electrodes are formed as a light sensor part, and a common electrode 22, the discrete signal electrode 30 and the amorphous Si layer placed between the both electrodes are formed as a leak current preventing diode. Thus, since the image sensor has a structure wherein the light signal is incident from the side of the discrete electrode 24, at least the discrete electrode 24 as the sensor part is formed of a clear electrode of Sn oxide, InSn oxide, In oxide, etc. |
