| 摘要 |
PURPOSE:To simplify a production process by reducing an ion implantation process to one time and to reduce a production cost by a method wherein an information storage electrode of a capacitor of a dynamic type memory cell is patterned and formed on an insulating film on the surface of a semiconductor substrate and, after that, ions of an impurity whose conductivity type is opposite to that of the substrate are implanted. CONSTITUTION:A third comparatively thick insulating film 8 is formed on a semiconductor substrate 1. Then, a resist 16 is coated and patterned to a desired shape. Then, ions of an impurity whose conductivity type is opposite to that of the semiconductor substrate 1 are implanted; the impurity whose ions have been implanted is activated; an impurity region 17 is formed on the surface of the semiconductor substrate 1. By this ion implantation, the ions are pierced through the third insulating film 8, a second insulating film 6 and an information storage electrode 4 and reach the surface of the semiconductor substrate 1; they destroy a natural oxide film generated at an interface between the information storage electrode 4 and the semiconductor substrate 1 and make the information storage electrode 4 electrically conductive to the impurity region 17. Accordingly, a production process can be simplified and a production cost can be lowered. |
