| 摘要 |
<p>PURPOSE:To increase the number of times of the reload of data by providing a spare memory cell at every address in a decoder. CONSTITUTION:Plural memory cells selected by the same address are provided, and those memory cells are switched to use at need. For example, a spare word line W12 is used when the memory cell on a word line L11 selected by the decoder L1 is destroyed. In other words, a current flows from a transistor T to a fuse F1 and next, to a transistor T by applying a voltage cut off by the fuse F1 on a signal A, setting a signal C at logic '0', and selecting the decoder L1, then, the fuse F1 is cut off. Since a signal B is set at logic '1' in an ordinary activity state, the output of an inverter L3 always goes to logic '0', and the word line L12 is selected in the case of selecting the decoder L1. In such a way, it is possible to extend the number of times of the reload of the data.</p> |
