PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To stably form fine hole-shaped resist patterns by removing a negative type photoresist material coated with the other negative type photoresist material to the thickness at which a positive type photoresist is exposed and selectively removing the patterns. CONSTITUTION:The hole-shaped positive type photoresist patterns 1 are formed on a substrate 2. The patterns 1 are coated with the negative type photoresist material 3. The isoprene rubber type negative type photoresist is used for the material 3 and the film is formed by a spin coating method. The material 3 is then removed until the patterns 1 are exposed. The positive type photoresist 1 is removed and the hole-shaped patterns are formed of the resist material 3 on the substrate 2 when the entire surface of the surface exposed with the resist 1 is irradiated with UV light. The fine hole-shaped resist patterns are formed in this way.