| 摘要 |
PCT No. PCT/CH85/00110 Sec. 371 Date Mar. 6, 1986 Sec. 102(e) Date Mar. 6, 1986 PCT Filed Jul. 9, 1985 PCT Pub. No. WO86/00756 PCT Pub. Date Jan. 30, 1986.On a semiconductor substrate (1), e.g. of Si, a IIa-metal-fluoride layer (2) and in that a narrow-gap semiconductor layer (3), e.g. of a lead-chalcogenide, is epitaxially grown. In the narrow-gap semiconductor layer (3) one or more infrared sensors (4) are integrated. In the semiconductor substrate (1) is integrated at least one part of an electronic circuit arrangement (5) for interpretation of the electric signals supplied by the sensors (4). The fluoride layer (2) exhibits at its interfaces lattice constants which lie between, or close to, the different lattice constants of the semiconductor substrate (1) and the narrow-gap semiconductor layer (3). For a better lattice match at the interfaces of the fluoride layer (2) to the semiconductor substrate (1) on the one hand and to the narrow-gap semiconductor layer (3) on the other, the fluoride layer consists appropriately of a mixed crystal CaxSryBazCd1-x-u-zF2 with 0</=x, y, z</=1, whereby its composition, and therefore its lattice constant, changes over the thickness of the layer. |
